 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSG9922E 6.8A, 20V,RDS(ON) 20m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 Features * Optimal DC/DC Battery Application * Low On-Resistance * Capable Of 2.5V Gate Drive D1 8 D1 7 D2 6 D2 5 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 9922ESS Date Code G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 12 6.8 5.4 25 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25oC, ID=1mA VDS=VGS, ID=1mA VGS=12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=4A 0.05 _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 10 10 100 20 25 40 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Rg _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 25 3 9 11 12 47 23 1730 280 240 22 2.2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance nC ID=6A VDS=16V VGS=4.5V _ _ _ _ VDD=15V ID=1A nS VGS=4.5V RG=3.3 [ RD=15 [ 2770 _ _ pF VGS=0V VDS=20V f=1.0MHz _ _ _ _ S [ VDS=4.5V, ID=6A f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS =0.84A , VGS=0V. IS =6A , VGS=0V. dl/dt=100A/us Reverse Recovery Time 2 Trr Qrr _ _ 24 18 _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 135 : /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 4 of 4 |
Price & Availability of SSG9922E
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |